kw.\*:("Technologie MOS")
Results 1 to 25 of 12721
Selection :
Advanced DMOS memory cell using a new isolation structureTERADA, K; ISHIJIMA, T; SUZUKI, S et al.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 9, pp 1308-1313, issn 0018-9383Article
MOS AND BIPOLAR ICS IN CONSUMER APPLICATIONS.PENNEY JD.1974; MICROELECTRON. AND RELIABIL.; G.B.; DA. 1974; VOL. 13; NO 5; PP. 379-386; (SEMINEX SEMIN., LONDON; 1974)Conference Paper
CMOS Schmitt trigger with wide hysteresisDOKIC, B. L.Microelectronics. 1984, Vol 15, Num 2, pp 24-29, issn 0026-2692Article
REVERSE CMOS PROCESSINGMADDOX RL.1981; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1981; VOL. 24; NO 2; PP. 128-140; 5 P.; BIBL. 15 REF.Article
NEW CMOS TECHNOLOGIESHOEFFLINGER B; ZIMMER G.1980; CONF. SER.-INST. PHYS.; ISSN 0305-2346; GBR; DA. 1980 PUBL. 1981; NO 57; PP. 85-139; BIBL. 2 P.Conference Paper
LIMITATIONS ON THE MAXIMUM OPERATING VOLTAGE OF CMOS INTEGRATED CIRCUITS.DISHMAN JM.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 551-554; BIBL. 6 REF.Conference Paper
A CMOS magnetic field sensorPOPOVIC, R. S; BALTES, H. P.IEEE journal of solid-state circuits. 1983, Vol 18, Num 4, pp 426-428, issn 0018-9200Article
CAD needs with respect to fault modellingCOURTOIS, B.Rapport de recherche - IMAG. 1983, Num 415, issn 0750-7380, 25 p.Report
A 6K-GATE CMOS GATE ARRAYTAGO H; KOBAYASHI T; KOBAYASHI M et al.1982; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 5; PP. 907-912; BIBL. 7 REF.Article
LOCMOS LENDS ITSELF TO FULL SCALE INTEGRATION.BEER A.1977; NEW ELECTRON; G.B.; DA. 1977; VOL. 10; NO 3; PP. 28-32 (3P.)Article
DIE PRUEFUNG VON CMOS-BAUELEMENTEN UND- SCHALTUNGEN.HERRMAN G.1975; ELEKTRONIK; DTSCH.; DA. 1975; VOL. 24; NO 9; PP. 103-106; BIBL. 1 REF.Article
MOS DEVICE AND TECHNOLOGY CONSTRAINTS IN VLSIYOUSSEF EL MANSY.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 567-573; BIBL. 26 REF.Article
MIKROCOMPUTER-FAMILIE TMS-1000 = LA FAMILLE DE MICRO-ORDINATEURS TMS-1000GOESSLER R.1980; ELEKTRONIK (MUENCH.); ISSN 0013-5658; DEU; DA. 1980; VOL. 29; NO 20; PP. 103-104Article
PROPERTIES OF ESFI MOS TRANSISTORS DUE TO THE FLOATING SUBSTRATE AND THE FINITE VOLUME. = LES TRANSISTORS MOS AVEC DES COUCHES DE SILICIUM EPITAXIAL SUR L'ISOLANT: PROPRIETES DUES AU SUBSTRAT FLOTTANT ET AU VOLUME FINITIHANYI J; SCHLOTTERER H.1975; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 11; PP. 1017-1023; BIBL. 11 REF.Article
RECENT DEVELOPMENTS IN CMOS/SOS.KAISER HW; GEHWEILER WF; STOTZ WJ et al.1973; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1973; VOL. 13; NO 9; PP. 38-46 (6P.)Article
GATE-ARRAY-TECHNOLOGIE FUER HOECHSTINTEGRATION = LA TECHNOLOGIE DES RESEAUX DE PORTES POUR L'INTEGRATION A TRES GRANDE ECHELLEROHDE W.1981; RADIO FERNS. ELEKTRON.; ISSN 0033-7900; DDR; DA. 1981; NO 12; PP. 762-763; BIBL. 1 REF.Article
SCHNELLE STATISCHE RAM-BAUSTEINE = COMPOSANTS RAM STATIQUES RAPIDESCAPECE RP.1979; ELEKTRONIK; DEU; DA. 1979; VOL. 28; NO 20; PP. 39-50; BIBL. 3 REF.Article
C2L: A NEW HIGH-SPEED HIGH-DENSITY BULK CMOS TECHNOLOGY.DINGWALL AGF; STRICKER RE.1977; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 4; PP. 344-349; BIBL. 8 REF.Article
A dual-band 802.11a/b/g radio in 0.18μm CMOSPERRAUD, L; PINATEL, C; RECOULY, M et al.IEEE International Solid-State Circuits Conference. 2004, pp 94-95, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper
Characterization of poly-buffered LOCOS in manufacturing environmentGULDI, R. L; MCKEE, B; DAMMINGA, G. M et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 12, pp 3815-3820, issn 0013-4651, 6 p.Article
A triple-level wired 24K-gate CMOS gate arraySAIGO, T; NIWA, K; OHTO, T et al.IEEE journal of solid-state circuits. 1985, Vol 20, Num 5, pp 1005-1011, issn 0018-9200Article
High-speed high-resolution CMOS voltage comparatorNG, W. T; SALAMA, C. A. T.Electronics Letters. 1986, Vol 22, Num 6, pp 338-339, issn 0013-5194Article
L'amplificateur CMOS dans les circuits à capacités commutées = CMOS amplifier in switched capacity circuitsBAILLIEU, F; HERMEL, R.Revue de physique appliquée. 1985, Vol 20, Num 7, pp 465-482, issn 0035-1687Article
A simple high-gain CMOS voltage comparator circuitFREITAS, D. A; CURRENT, K. W.International journal of electronics. 1984, Vol 57, Num 2, pp 195-198, issn 0020-7217Article
2-to-1 selector IC in 90-nm CMOS technology operating up to 50 Gb/sYAMAMOTO, Takuji; YAMAZAKI, Daisuke; HORINAKA, Minoru et al.IEEE Compound Semiconductor Integrated Circuit Symposium. 2004, pp 243-246, isbn 0-7803-8616-7, 1Vol, 4 p.Conference Paper